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Early tests on its direct-emitting, green, indium gallium nitride (InGaN) laser show that it achieves a 50mW optical output and emits light in true green with a 515nm wavelength.

Osram Opto Semiconductors is announcing early tests on its direct-emitting, green, indium gallium nitride (InGaN) laser show that it achieves a 50mW optical output and emits light in true green with a 515nm wavelength. Compared with semiconductor lasers, based on existing technology, that operate with frequency doubling, direct-emitting green lasers are more compact, offer greater temperature stability, are easier to control and have higher modulation capability at several hundred MHz, company reports.

The diode emits a “true green” light, which is defined by the spectral range of 515 to 535nm. Green lasers are used in medical and industrial applications, and also as light sources in mobile mini-projectors. A direct-emitting green laser can help make these projectors even smaller, with even better performance. The great advantage of laser projectors – a consistently sharp, true-color, high-contrast image irrespective of the projection distance and projection surface – should one day be available for cellphones and cameras.